Analytical Threshold Voltage Formula Including Narrow-Channel Effects for VLSI Mesa-Isolated Fully Depleted Ultrathin Silicon-On-Insulator N-Channel Metal-Oxide-Silicon Devices

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概要

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• We report an analytical threshold voltage formula taking into consideration narrow-channel effects for mesaisolated fully depleted ultrathin silicon-on-insulator (SOI) n-channel metal-oxide-silicon (NMOS) devices based on a quasi-two-dimensional approach. From the analytical formula, contrary to LOCOS-isolated bulk NMOS devices, the narrow-channel effects in the mesa-isolated fully depleted ultrathin SOI NMOS devices are due to elevation of the electrostatic potential in the conducting channel near the sidewall.

• 社団法人応用物理学会の論文
• 1995-08-15

著者

• Kuo James

  Rm. 338 Department Of Electrical Engineering National Taiwan University

• Su Ker-wei

  Rm. 338 Department Of Electrical Engineering National Taiwan University

関連論文

• Analytical Threshold Voltage Formula Including Narrow-Channel Effects for VLSI Mesa-Isolated Fully Depleted Ultrathin Silicon-On-Insulator N-Channel Metal-Oxide-Silicon Devices
• Analytical DC Model for a-Si:H Thin-Film Transistors Using Effective Temperature Approach

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