Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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Park Jin-suk
Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn
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Del Castillo
Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn
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LIN True-Lon
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Tec
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GUNAPALA Sarath
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Tec
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JONES Eric
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Tec
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Jones Eric
Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn
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Lin True-lon
Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn
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Gunapala Sarath
Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn
関連論文
- Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy
- Very Long Wavelength Intersubband Infrared Hot Electron Transistor