Very Long Wavelength Intersubband Infrared Hot Electron Transistor

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概要

• 論文の詳細を見る

• We have demonstrated the first very long wavelength (16 μm) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/Al_xGa_<1-x>As (x=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick Al_xGa_<1-x>As(x=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy tunneled electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.

• 社団法人応用物理学会の論文
• 1994-01-30

著者

• PARK Jin

  Center for Non-crystalline Materials, Department of Materials Science and Engineering, Yonsei Univer

• Liu John

  Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn

• Park Jin

  Center For Non-crystalline Materials Department Of Materials Science And Engineering Yonsei Universi

• GUNAPALA Sarath

  Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Tec

• LIN True

  Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Tec

• Lin True

  Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn

• Gunapala Sarath

  Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn

• Gunapala Sarath

  Center For Space Microelectronics Technology Jet Propulsion Laboratory California Institute Of Techn

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• Very Long Wavelength Intersubband Infrared Hot Electron Transistor

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