Dynamics of Photoexcited Carriers and Space-Charge Field by Picosecond Two-Beam Excitation in Photorefractive Semiconductors

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概要

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• Dynamics of space-charge field formation and its decay, as well as those of plaotoexcited electrons and holes, by picosecond two-beam excitation in photorefractive semiconductors are calculated by means of the band transport rate equations. Approximate analytic solutions that describe the transient behaviors of carriers, deep level donors and the space-charge field at the onset of pulse incidence and after the pulse are obtained. The result is applied to a semi-insulating undoped GaAs crystal with an input of two single-shot 20 ps pulses at 1.064 μm. It is found that two-photon absorption enhances the transient peak of the space-charge field but suppresses the long-lived space-charge field component significantly. The result is also compared with a numerical simulation.

• 社団法人応用物理学会の論文
• 1994-04-15

著者

• Tomita Y

  Corporate R&d Laboratories Pioneer Corporation

• TOMITA Yasuo

  Electronics Engineering Department, University of Electro-Communications

• ISHII Hidemoto

  Electronics Engineering Department, University of Electro-Communications

• Tomita Yasuo

  Electronics Engineering Department University Of Electro-communications

• Ishii Hidemoto

  Electronics Engineering Department University Of Electro-communications

関連論文

• Dynamics of Photoexcited Carriers and Space-Charge Field by Picosecond Two-Beam Excitation in Photorefractive Semiconductors
• Dynamics of Photoexcited Picosecond Space-Charge Fields with Hot Electron Nonlinear Transport in DC-Biased Semi-Insulating GaAs
• Broadband Photorefractivity of Cr-Doped Strontium Barium Niobate in the Visible and Near-Infrared Spectral Regions

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