Dynamics of Photoexcited Picosecond Space-Charge Fields with Hot Electron Nonlinear Transport in DC-Biased Semi-Insulating GaAs
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概要
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Picosecond transient characteristics of photocarriers and space-charge fields excited by single-shot picosecond pulses at 1.064 μm in high-dc-biased GaAs are analyzed by means of the band transport rate equations. Numerical simulations are performed and their results are compared with approximate analytic results. In particular, the effects of hot electron nonlinear transport on the dynamics of photocarriers and space-charge fields are discussed. It is found that the application of high dc electric fields results in an increase of decay rates of photocarriers and space-charge fields and induces oscillatory behaviors in their decay dynamics under certain conditions. It is also found that the space-charge field can be enhanced considerably by the hot electron nonlinear transport and its cause is attributed to an increase of the electron temperature.
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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KUSAKABE Kazuhide
Electrical and Electronics Engineering, Sophia University
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KUSAKABE Kazuhide
Department of Electrical and Electronics Engineering, Sophia University
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Kusakabe K
Department Of Electrical And Electronics Engineering Sophia University
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Tomita Yasuo
Electronics Engineering Department University Of Electro-communications
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