Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
Kang Dae-gwan
Central Research And Development Laboratory Goldstar Electron Company Ltd.
-
Hwang Hyunsang
Central Research And Development Laboratory Goldstar Electron Company Ltd.
-
Goo Jung-suk
Central Research And Development Laboratory Goldstar Electron Company Ltd.
-
SHIN Hyungsoon
Central Research and Development Laboratory, GoldStar Electron Company, Ltd.
-
JU Dong-Hyuk
Central Research and Development Laboratory, GoldStar Electron Company, Ltd.
-
Ju Dong-hyuk
Central Research And Development Laboratory Goldstar Electron Company Ltd.
-
Shin Hyungsoon
Central Research And Development Laboratory Goldstar Electron Company Ltd.