PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering : Thin Films
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概要
- 論文の詳細を見る
Pt-Ti alloy films were studied for use as a lower electrode of the ferroelectric lead zirconate titanate (PZT) thin film capacitor. Pt-Ti alloy films with different Ti/Pt atomic rations were first prepared by rf sputtering. Subsequently, PZT thin films were deposited also by rf magnetron sputtering on the Pt-Ti alloy metals. The Ti/Pt ratio in the alloy was found to strongly affect the crystal structure formation and the composition of the PZT thin films. The Ti/Pt ratio range from 0.02 to 0.17 was shown to bring about a preferable perovskite-type structure and a reproducible constant composition. The effect of Ti atoms in the Pt-Ti lower electrode was discussed in connection with the Pb atom evaporation rate.
- 社団法人応用物理学会の論文
- 1991-09-30
著者
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Abe Kazuhide
Metals And Laboratory Toshiba R & D Center Toshiba Corporation
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Abe Kazuhide
Metals And Ceramics Laboratory Toshiba R & D Center Toshiba Corporation
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Toyoda H
Toshiba Corp. Kwasaki Jpn
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TOMITA Hiroshi
Metals and Laboratory, Toshiba R & D Center, Toshiba Corporation
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TOYODA Hiroshi
Metals and Laboratory, Toshiba R & D Center, Toshiba Corporation
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Tomita Hiroshi
Metals And Laboratory Toshiba R & D Center Toshiba Corporation
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Imai Motomasa
Metals and Ceramics Laboratory, Toshiba R & D Center, Toshiba Corporation, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210
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Yokote Yukari
Metals and Ceramics Laboratory, Toshiba R & D Center, Toshiba Corporation, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210
関連論文
- Epitaxial Growth of SrTiO_3 Films on Pt Electrodes and Their Electrical Properties
- PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering : Thin Films
- Temperature Stability of a PBZMT Electrostrictive Ceramic : F: FERROELECTRIC MATERIALS