Epitaxial Growth of SrTiO_3 Films on Pt Electrodes and Their Electrical Properties

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概要

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• Heteroepitaxial SrTiO_3 films of perovskite structure with thicknesses of 46 to 184 nm were prepared by rf magnetron sputtering, holding substrate temperature at 400℃, on Pt films which were also epitaxially grown on a MgO(100) substrate in advance. The relative dielectric constant was estimated to be more than 300, and the leakage current density was less than 10^<-8> A/cm^2. The analysis of the leakage current suggests Schottky barrier formation at the interface between SrTiO_3 and Pt films, with a barrier height of about 1 V.

• 社団法人応用物理学会の論文
• 1992-09-30

著者

• Abe Kazuhide

  Metals And Ceramics Laboratory Toshiba R & D Center Toshiba Corporation

• Komatsu Shuichi

  Metals And Ceramics Laboratory Toshiba R & D Center Toshiba Corporation

関連論文

• Epitaxial Growth of SrTiO_3 Films on Pt Electrodes and Their Electrical Properties
• PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering : Thin Films
• Temperature Stability of a PBZMT Electrostrictive Ceramic : F: FERROELECTRIC MATERIALS

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