Metal Organic Molecular Beam Epitaxy Growth of Ga_<0.5>In_<0.5>P/GaAs Quantum Well Structures

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概要

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• High-quality GaAs/GaInP single and multi-quantum-well structures have been grown by metal organic molecular beam epitaxy. Welts as thin as 10 Å have been grown exhibiting confinement energies exceeding 310 meV. The influence of growth interruption at both interfaces has been investigated by low-temperature photoluminescence. The critical role of the relative incorporation kinetics of arsenic and phosphorus atoms in determining the nature of the normal and inverted interfaces defining GaAs quantum welts is shown. An excitonic type recombination is evidenced by low-temperature-dependence photoluminescence measurements. Carrier capture is shown to be very efficient, even for the narrowest welts studied.

• 社団法人応用物理学会の論文
• 1991-06-15

著者

• Bove Philippe

  Laboratoire Central De Recherches Thomson-csf

• Hirtz Jean

  Laboratoire Central De Recherches Thomson-csf

• Garcia J

  Thomson‐csf Orsay Fra

• GARCIA Jean

  Laboratoire Central de Recherches, THOMSON-CSF

• MAUREL Philippe

  Laboratoire Central de Recherches, THOMSON-CSF

• Maurel Philippe

  Laboratoire Central De Recherches Thomson-csf

関連論文

• Metal Organic Molecular Beam Epitaxy Growth of Ga_In_P/GaAs Quantum Well Structures
• Influence of Rapid Thermal Annealing on the Properties of Strained GaInAs Quantum Well Lasers

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