Influence of Rapid Thermal Annealing on the Properties of Strained GaInAs Quantum Well Lasers

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概要

• 論文の詳細を見る

• The influence of rapid thermal annealing on the properties of GaInAs strained quantum well lasers is studied. Photoluminescence performed at 300 and 77 K shows that an optimum is found for annealing at 800℃-10 s. The threshold current density of the laser decreases by a factor of 2 to 3 while its internal quantum efficiency increases from 30% up to 60%. The origin of the non radiative traps involved in the process is discussed.

• 社団法人応用物理学会の論文
• 1993-03-15

著者

• Hirtz J

  Laboratoire Central De Recherches Thomson-csf

• Hirtz Jean

  Laboratoire Central De Recherches Thomson-csf

• MAUREL Philippe

  Laboratoire Central de Recherches, THOMSON-CSF

• NAGLE Julien

  Laboratoire Central de Recherches, THOMSON-CSF

• Maurel P

  Laboratoire Central De Recherches Thomson-csf

• Maurel Philippe

  Laboratoire Central De Recherches Thomson-csf

• Nagle Julien

  Laboratoire Central De Recherches Thomson-csf

関連論文

• Metal Organic Molecular Beam Epitaxy Growth of Ga_In_P/GaAs Quantum Well Structures
• Influence of Rapid Thermal Annealing on the Properties of Strained GaInAs Quantum Well Lasers

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