Reaction Mechanisms in the OMVPE Growth of GaAs and AlGaAs

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概要

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• The thermal decomposition of TMA, TMG, TEG and AsH_3 has been investigated by QMS measurements. Hydrogen is used as a carrier gas. The order of the decomposition temperature is AsH_>TMG>TMA>TEG. The reactivity of H_2 is stronger on TMA than on TMG, which results in a lower decomposition temperature of TMA than that of TMG. Hydrogen hardly reacts on TEG. The decomposition of TMA is enhanced with increasing AsH_3, while it is suppressed by a small addition of AsH_3 compared with TMA alone. This suppression originates in the interaction between TMA and AsH_3, or adduct formation. The relative incorporation rate of Al in AlGaAs growth decreases at lower temperatures or lower V/III ratios. This behavior can be explained by adduct formation.

• 社団法人応用物理学会の論文
• 1990-05-20

著者

• Mashita Masao

  Electron Devices Laboratory Toshiba Research And Development Center Toshiba Corporation

関連論文

• Epitaxial Growth Mechanism of the (100) As Surface of GaAs : The Effect of Positive Holes : Condensed Matter
• Reaction Mechanisms in the OMVPE Growth of GaAs and AlGaAs
• Ultraviolet Light Irradiation Effects on Silicon Doping of GaAs Grown by the Triethylgallium-Arsine OMVPE Method
• Mass Spectrometric Studies on Silicon Doping of OMVPE GaAs

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