Ultraviolet Light Irradiation Effects on Silicon Doping of GaAs Grown by the Triethylgallium-Arsine OMVPE Method

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概要

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• The silicon doping of low-pressure OMVPE GaAs has been studied using disilane (Si2H6) as a doping source. Triethylgallium (TEG) and arsine (AsH3) are used as starting materials. A 240–300 nm ultraviolet (UV) light irradiation has been found to enhance silicon doping, though the UV light wavelengths are longer than the absorption edge (200 nm) of Si2H6. The doping enhancement increases with a decrease in the substrate temperature below 700°C. The temperature dependence of the doping enhancement strongly differs from that for the case using trimethylgallium (TMG). From quadrupole mass spectrometer (QMS) analysis of gases in the reactor, it has been found that the doping enhancement corresponds closely to the amount of reaction products, (C2H5)nSiH4-n ($n{=}1\text{--}3$). A doping enhancement mechanism, including radical generation, is discussed.

• 1989-04-20

著者

• Mashita Masao

  Electron Devices Laboratory Toshiba Research And Development Center Toshiba Corporation

• Mashita Masao

  Electron Devices Laboratory, Toshiba Research and Development Center, Toshiba Corporation, 1 Komukai, Toshiba-cho, Saiwai-ku, Kwasaki 210

関連論文

• Epitaxial Growth Mechanism of the (100) As Surface of GaAs : The Effect of Positive Holes : Condensed Matter
• Reaction Mechanisms in the OMVPE Growth of GaAs and AlGaAs
• Ultraviolet Light Irradiation Effects on Silicon Doping of GaAs Grown by the Triethylgallium-Arsine OMVPE Method
• Mass Spectrometric Studies on Silicon Doping of OMVPE GaAs

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