DC Bias Method for a-Si:H Deposition on a Dielectric Substrate Using Electron Cyclotron Resonance Plasma

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概要

• 論文の詳細を見る

• A new DC bias method applicable to a-Si:H deposition on the dielectric substrate using an electron cyclotron resonance (ECR) plasma is investigated. A reactor consists of an ECR chamber and a deposition chamber, where a DC bias voltage is applied to a substrate holder against a grounded mesh set between two chambers. The optimum bias voltage exists in the positive region, and the highly photosensitive a-Si:H is deposited on the glass substrate.

• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Kawamura Takao

  Electrical Engineering College Of Engineering University Of Osaka Prefecture

• Nakayama Yoshikazu

  Electrical Engineering College Of Engineering University Of Osaka Prefecture

• KONDOH Mitsuru

  Electrical Engineering, College of Engineering, University of Osaka Prefecture

• HITSUISHI Kohji

  Electrical Engineering, College of Engineering, University of Osaka Prefecture

• Kondoh Mitsuru

  Electrical Engineering College Of Engineering University Of Osaka Prefecture

• Hitsuishi Kohji

  Electrical Engineering College Of Engineering University Of Osaka Prefecture

関連論文

• A study of antireflective and antistatic coating with ultrafine particles
• DC Bias Method for a-Si:H Deposition on a Dielectric Substrate Using Electron Cyclotron Resonance Plasma

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