Electronic Structure of Nonstoichiometric Boron Nitride Films
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概要
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The density of states of π bands in boron nitride films is evaluated by assuming the films to be a substitutional disordered system in a two-dimensional hexagonal network. The Hamiltonian is described with a simple tight binding model and the calculations are carried out by using an extended version of the coherent potential approximation including atomic correlation. For completely disordered systems, no forbidden gap is found even in B/N=1, contrary to the experimental findings. When we start from periodic boron nitride (h-BN), on the other hand, where the energy gap is approximately 5 eV, the change in the composition ratio of B/N>1 turns out to narrow the gap due to the occurrence of new states. We suggest that the emergence of such a subband shows the crucial role of the decrease in the optical band gap of boron-rich films.
- 1990-01-20
著者
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Sakuma Akimasa
Magnetic & Electronic Materials Research Laboratory Hitachi Metals Ltd.
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Sakuma Akimasa
Magnetic & Electronic Materials Research Laboratory Hitachi Metal Ltd
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