Cathodoluminescence from Epitaxial Diamond Layer Grown by Plasma-Assisted Chemical Vapor Deposition on High-Pressure Synthetic Diamond

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概要

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• Cathodoluminescence (CL) spectra and images of an epitaxial diamond layer grown by microwave plasma-assisted chemical vapor deposition (CVD) on high-pressure synthetic (HP) diamond were measured. The epitaxial layer was grown using carbon monoxide (CO) and hydrogen (H_2) on a (111)-oriented HP diamond where lattice planes of (131^^-), (010), and (141) came together at one corner. On the (111) and (010) planes, band A centered at 420 nm and 520 nm was dominant. The color centers related to nitrogen (533.2 nm; 2.34 eV, 575.9 nm; 2.16 eV) and silicon (739 nm; 1.68 eV) were observed on the (131^^-) and (141) planes. The CL images were also observed.

• 社団法人応用物理学会の論文
• 1992-11-15

著者

• Katsumata Satoshi

  Department Of Planning And Development Idemitsu Petrochemical Co. Ltd.

関連論文

• Diamond Synthesis by the Microwave Plasma Chemical Vapor Deposition Method Using the Pretreated Carbon Dioxide and Hydrogen Mixed-Gas System
• Cathodoluminescence from Epitaxial Diamond Layer Grown by Plasma-Assisted Chemical Vapor Deposition on High-Pressure Synthetic Diamond

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