Diamond Synthesis by the Microwave Plasma Chemical Vapor Deposition Method Using the Pretreated Carbon Dioxide and Hydrogen Mixed-Gas System
スポンサーリンク
概要
- 論文の詳細を見る
High-quality diamond was obtained by the microwave plasma-assisted chemical vapor deposition (plasma CVD) method using the pretreated carbon dioxide (CO_2) and hydrogen (H_2) mixed-gas system. The pretreatment method is as follows: at first, CO_2 and H_2 pass through the prereactor, where plasma is generated by microwave discharge, and then the reactant passes through the cold trap at around 185 K in order to remove water (H_20) produced in the plasma from CO_2 and H_2. The residue of the pretreated CO_2 and H_2 mixed gas, which consists of CO, CO_2 and H_2, is introduced into the main reactor where diamond is synthesized. Diamond can grow to a feed ratio of CO_2/H_2=25/100 sccm. Plasma diagnosis was performed using optical emission spectroscopy (OES) and gas chromatography (GC).
- 社団法人応用物理学会の論文
- 1992-03-15
著者
-
Katsumata S
Department Of Planning And Development Idemitsu Petrochemical Co. Ltd.
-
Katsumata Satoshi
Department Of Planning And Development Idemitsu Petrochemical Co. Ltd.
関連論文
- Diamond Synthesis by the Microwave Plasma Chemical Vapor Deposition Method Using the Pretreated Carbon Dioxide and Hydrogen Mixed-Gas System
- Cathodoluminescence from Epitaxial Diamond Layer Grown by Plasma-Assisted Chemical Vapor Deposition on High-Pressure Synthetic Diamond