Preparation and Evaluation of Pb(Zr・Ti)O_3 Thin Films by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Dipivaloylmethane (DPM) metalorganic precursors, Pb(DPM)_2, Zr(DPM)_4 and Ti(OPr^i)_2(DPM)_2, are used as starting materials in the metalorganic chemical vapor deposition (MOCVD) method for the preparation of Pb(Zr_xTi_<1-x>)O_3(PZT) thin films. The films are deposited at the rate of 150 to 700 Å/min under atmospheric pressure and reduced pressure of 10 ∼ 30 Torr. The deposition rate is about ten times as high as that of the conventional sputtering method. The dielectric constant of the film (X=0.2) on a Pt/Si substrate is about 300 at room temperature. This value agrees with that of ceramic or sputtered films.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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Takenaka Tadashi
Faculty Of Science And Technology Science University Of Tokyo
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Sakata K
Faculty Of Science And Technology Science University Of Tokyo
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Sakata Koichiro
Faculty Of Science And Technology Science University Of Tokyo
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Sakata Koichiro
Department Of Electrical Engineering Faculty Of Science And Technology Science University Of Tokyo
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Sakata Koichiro
Depart. Elect. Eng. Fac. Science And Technology Science University Of Tokyo
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Sakata Koichiro
Faculty Of Science Technology Science University Of Tokyo
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TOMONARI Hajime
Faculty of Science and Technology, Science University of Tokyo
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ISHIU Takehiko
Faculty of Science and Technology, Science University of Tokyo
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Ishiu Takehiko
Faculty Of Science And Technology Science University Of Tokyo
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Tomonari Hajime
Faculty Of Science And Technology Science University Of Tokyo
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