Au Wire Bonding to Cu Pad Using Ti Thin Film

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概要

• 論文の詳細を見る

• An improved multilayer structure of a metal pad is developed for Au wire bonding to a monolithic IC. The proposed structure of the pad is Ti(2.5 nm)/Cu(800 nm)/Ti(70 nm)/Al(130 nm) on SiO_2/Si substrates. Thermosonie Au wire bonding to the pad shows good bondability after heating at 473 K for the storage time of 3.6 ks in air. During heat treatment at 473 K after bonding, the bond between the Au wire and the pad is not degraded.

• 社団法人応用物理学会の論文
• 1992-05-15

著者

• Ueno Hiroshi

  Semiconductor Research Laboratory Clarion Co. Lid.

関連論文

• Reliable Au Wire Bonding to Al/Ti/Al Pad
• Au Wire Bonding to Cu Pad Using Ti Thin Film

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