Thermal Annealing Studies of Boron-Implanted HgCdTe by Electrolyte Electroreflectance
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Chao S‐c
National Chaio Tung Univ. Hsinchu Twn
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Chang T‐f
National Chiao Tung Univ. Twn
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CHAO Shi-Chen
Department of Electrical Engineering, National Taiwan University
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HSU Kuo-Tung
Department of Electrical Engineering, National Taiwan University
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JAN Gwo-Jen
Department of Electrical Engineering, National Taiwan University
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JUANG Feng-Yuh
Chung-Shan Institute of Science and Technology
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CHANG Tin-Fung
Chung-Shan Institute of Science and Technology
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WU Jia-Song
Chung-Shan Institute of Science and Technology
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Jan G‐j
National Taiwan Univ. Taipei Twn
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Jan Gwo-jen
Department Of Electrical Engineering National Taiwan University
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Hsu K‐t
National Taiwan Univ. Taipei Twn
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Hsu Kuo-tung
Department Of Electrical Engineering National Taiwan University
関連論文
- Thermal Annealing Studies of Boron-Implanted HgCdTe by Electrolyte Electroreflectance
- Simultaneous Measurement of Phase Retardation and Fast-Axis Angle of Phase Retardation Plate
- Room-Temperature Photoreflectance Characterization of InAlAs /InGaAs Heterojunction Bipolar Transistor Structure Including Two-Dimensional Electron Gas
- Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy
- Simultaneous Measurement of Phase Retardation and Fast-Axis Angle of Phase Retardation Plate