Comments on "Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy"

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概要

• 論文の詳細を見る

• It is shown that the data reported by Nozawa and Horikoshi [Jpn. J. Appl. Phys. 32 (1993) 626] on the tilting of GaAs layers grown on Si by migration-enhanced epitaxy can be explained by the layer-by-layer nature of the growth process. It is also pointed out that the azimuthal angular shift of the GaAs-Si X-ray rocking curve peak position from the substrate miscut direction does not hint to the in-plane rotation of the epilayer as a whole.

• 社団法人応用物理学会の論文
• 1993-10-15

著者

• RIESZ Ferenc

  Research Institute for Technical Physics of the Hungarian Academy of Sciences

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• Comments on "Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy"

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