Polycrystalline Carbon : A Novel Material for Gate Electrodes in MOS Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Hoyt J
Stanford Univ. Ca Usa
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RAGHAVAN G.
Solid State Laboratory, McCullough 226, Stanford University
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HOYT J.
Solid State Laboratory, McCullough 226, Stanford University
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GIBBONS J.
Solid State Laboratory, McCullough 226, Stanford University
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Gibbons J
Stanford Univ. Ca Usa
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Hoyt J.
Solid State Electronics Laboratory Stanford University
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Raghavan G.
Solid State Laboratory Mccullough 226 Stanford University
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Gibbons J.
Solid State Electronics Laboratory Stanford University
関連論文
- Polycrystalline Carbon : A Novel Material for Gate Electrodes in MOS Technology
- Strain Engineering of Silicon-Based Heterostructures : Materials and Devices