Strain Engineering of Silicon-Based Heterostructures : Materials and Devices
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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GIBBONS J.
Solid State Laboratory, McCullough 226, Stanford University
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Hoyt J.
Solid State Electronics Laboratory Stanford University
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RIM K.
Solid State Electronics Laboratory, Stanford University
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MITCHELL T.
Solid State Electronics Laboratory, Stanford University
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SINGH D.
Solid State Electronics Laboratory, Stanford University
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Mitchell T.
Solid State Electronics Laboratory Stanford University
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Singh D.
Solid State Electronics Laboratory Stanford University
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Gibbons J.
Solid State Electronics Laboratory Stanford University
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Rim K.
Solid State Electronics Laboratory Stanford University
関連論文
- Polycrystalline Carbon : A Novel Material for Gate Electrodes in MOS Technology
- Strain Engineering of Silicon-Based Heterostructures : Materials and Devices