Fabrication and Characterization of SnO_2/n-Si Solar Cells
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概要
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SnO_2/n-Si solar cells fabricated by the spray pyrolysis technique display significant photovoltaic effects when exposed to sunlight. These solar cells have a thin insulating layer at the SnO_2/n-Si interface. The presence of the thin insulating layer can increase the open-circuit voltage by increasing the diode quality factor and by reducing the dark saturation current. The performance of this heterojunction solar cell was an open-circuit voltage of 0.52V, short-circuit current of 21.0 mA/cm^2, fill factor of 0.53 and conversion efficiency of 7.2%. The relative photospectral response above fifty percent spreads in a range of 420 to 1020 nm and is wider than that of conventional Si p-n solar cells. One possibility for cost reduction lies in the method of junction fabrication, and the idea of a simply deposited SnO_2/n-Si junction is very attractive.
- 社団法人応用物理学会の論文
- 1979-06-05
著者
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NAGATOMO Takao
Department of Electronics Engineering, Faculty of Engineering, Shibaura Institute of Technology
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OMOTO Osamu
Department of Electronics Engineering, Faculty of Engineering, Shibaura Institute of Technology
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Endo Mitsuo
Department Of Surgery Faculty Of Medicine Tokyo Medical And Dental University
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Endo Mitsuo
Department Of Electronics Shibaura Institute Of Technology
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