Thermal Oxidation Rate of a Si_3N_4Film and Its Masking Effect against Oxidation of Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-06-05
著者
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Ando Ryo
Kita-itami Works Mitsubishi Electric Corp
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Nakayama Haruo
Kita-itami Works Mitsubishi Electric Corp.
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Nakayama Haruo
Kita-itami Works Mitsubishi Electric Corp
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ENOMOTO Tatsuya
LSI Development Laboratory, Kita-Itami Works, Mitsubishi Electric Corp
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MORITA Hiroshi
Kita-Itami Works, Mitsubishi Electric Corp
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Enomoto Tatsuya
Lsi Development Laboratory Kita-itami Works Mitsubishi Electric Corp
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Morita Hiroshi
Kita-itami Works Mitsubishi Electric Corp
関連論文
- Thermal Oxidation Rate of a Si_3N_4Film and Its Masking Effect against Oxidation of Silicon
- Loading Effect and Temperature Dependence of Etch Rate in CF_4 Plasma
- Effects of Nitride Deposition Conditions on Characteristics of an MNOS Nonvolatile Memory Transistor