Effects of Nitride Deposition Conditions on Characteristics of an MNOS Nonvolatile Memory Transistor

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概要

• 論文の詳細を見る

• An investigation was carried out of the memory characteristics of MNOS transistors with a nitride film deposited either by normal pressure CVD or low pressure CVD under a variety of conditions. As the SiH_4/NH_3 flow ratio increased in normal pressure CVD, writing and erasing could be executed by smaller voltages or shorter pulses, and the memory retention characteristic became worse. An MNOS transistor with a nitride film deposited by low pressure CVD showed somewhat different memory characteristics. The composition of the nitride/oxide double layers was analyzed by Auger depth profiling and by measurement of the electrical conductivities of the nitride films. The relations between these quantities and the transistor's memory characteristics are discussed.

• 社団法人応用物理学会の論文
• 1979-09-05

著者

• Nakayama Haruo

  Kita-itami Works Mitsubishi Electric Corp.

• Nakayama Haruo

  Kita-itami Works Mitsubishi Electric Corp

• Enomoto Tatsuya

  Lsi Development Laboratory Kita-itami Works Mitsubishi Electric Corp

関連論文

• Thermal Oxidation Rate of a Si_3N_4Film and Its Masking Effect against Oxidation of Silicon
• Loading Effect and Temperature Dependence of Etch Rate in CF_4 Plasma
• Effects of Nitride Deposition Conditions on Characteristics of an MNOS Nonvolatile Memory Transistor

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