Electrical Detection of Etching and Regrowth Processes in Sn Solution Regrowth Method

概要

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A technique to control both etching and regrowth processes in Sn solution regrowth method is proposed. Two Sn melts were made into contact on both sides of a n-type GaAs wafer, and constant current was passed through them. The detected voltage between Sn melts was used for the control of the wafer thickness. From the analysis of the contact properties of molten Sn and GaAs, it was found that, in the etching process, the voltage was mainly equal to the sum of ohmic drop in GaAs bulk and the drop of Schottky barrier resistance at Sn-GaAs contact. In the regrowth process, the Schottky barrier diminished abruptly, owing to the n^<++> layer deposited on GaAs. The electrical signals corresponding to these processes could be used for the control of n and n^<++> layer thickness.
社団法人応用物理学会の論文
1969-07-05