Trapping of High Field Domain in n-Type GaAs

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概要

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• High field current-voltage characteristics of n-type GaAs were investigated in the temperature range of 200∼300°K with long samples, and below room temperature remarkable current saturation is found before the current oscillation begins. The critical field for current saturation was nearly the same as that for the Gunn effect at room temperature. The field distribution was observed with a traveling probe, and the formation of stationary high field domain was detected in the current saturation region. A mechanism is proposed to explain the trapping of the high field domain which results in the current saturation and hysteresis effect observed in this experiment.

• 社団法人応用物理学会の論文
• 1966-04-15

著者

• NII Riro

  Electrical Communication Laboratory

• Yamashita Akiyasu

  Electrical Communication Laboratory

関連論文

• Oscillatory Magnetoresistance in N-Type PbTe
• Space-Charge-Limited Currents and the Velocity-Field Characteristic in n-Type GaAs
• Measurement of the Thermal Conductivity in Semiconductors
• Azbel'-Kaner Cyclotron Resonance in n-Type PbTe
• Cyclotron Absorption in Lead Telluride
• Space-Charge Currents in n-Type GaAs
• Electrical Detection of Etching and Regrowth Processes in Sn Solution Regrowth Method
• Trapping of High Field Domain in n-Type GaAs

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