Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO_2 Interface
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1969-05-05
著者
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Tanaka Kiyoshi
Semiconductor Engineering Department Tokyo Shibaura (toshiba) Electric Co. Ltd.
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Maeda Hajime
Central Research Laboratory Tokyo Shibaura (toshiba) Electric Co. Ltd.
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Ohwada Atsuhi
Semiconductor Engineering Department Tokyo Shibaura (TOSHIBA) Electric Co., Ltd.
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Ohwada Atsuhi
Semiconductor Engineering Department Tokyo Shibaura (toshiba) Electric Co. Ltd.
関連論文
- Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO_2 Interface
- Galvanomagnetic Anisotropy and the Energy-Dependent Warping of the Valence Bands in p-Si