Galvanomagnetic Anisotropy and the Energy-Dependent Warping of the Valence Bands in p-Si

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概要

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• According to experimental work by Miyazawa, Suzuki and Maeda, directional differences of weak-field galvanomagnetic coefficients in p-Si change with temperature and eventually reverse sign unlike in p-Ge. To clarify the correlation between these results and the warped valence bands, a calculation method for galvanomagnetic coefficients is developed, which includes a description of constant-energy surfaces in terms of cubic harmonics. Numerical evaluations are made using "band-anisotropy" parameters determined from the k-p perturbation equation with inverse-mass parameters and spin-orbit splitting thus far obtained. The results well reproduce many experimental features, especially the sign-reversal temperature T_c∼130°K in purest samples. Decrease in T_c with increasing impurities is explained from the mixing of ionized impurity scattering. Unusual decreases in the Hall factor R_0/R_∞ with increasing temperature between 100 and 300°K in p-Si are also derived from the energy-dependent warping in the valence bands.

• 社団法人日本物理学会の論文
• 1969-05-05

著者

• Maeda Hajime

  Central Research Laboratory Tokyo Shibaura (toshiba) Electric Co. Ltd.

• Maeda Hajime

  Central Research Laboratory Tokyo Shibaura (toshiba) Electrica Co. Ltd.

関連論文

• Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO_2 Interface
• Galvanomagnetic Anisotropy and the Energy-Dependent Warping of the Valence Bands in p-Si

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