Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon Surfaces

概要

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Experimental results are reported concerning the anisotropy of surface state density, N_<ss>, 1/f-type equivalent noise voltaze, V_N, and field effect mobilitv, _<μFE>, in p-channel MOS transistors with various crystallographic orientations in <011> and <001> zones. The amounts of V_N and N_<SS> are strongly correlated to each other, and both appear to be smallest around (811)-oriented surfaces. _<μFE> under strong electric field normal to the surface shows no apparent correlation to N_<SS>, but is markedly dependent on the direction of current flow on each surface except (111) and (100): μFE//[011] is maximum in the direction parallel to [011] on (011) plane and _<μFE>[011] is higher than _<μFE>//[011] on the planes between (111) and (100). The mobility anisotropy is interpreted in terms of the effective mass anisotropy caused by quantized hole motion, considering that the energy band structure at high energy remarkably differs from the one at lower energy.
社団法人応用物理学会の論文
1969-05-05