Space-Charge-Limited Currents and the Velocity-Field Characteristic in n-Type GaAs

スポンサーリンク

概要

• 論文の詳細を見る

• An analysis is made for the current-voltage characteristics of n-type GaAs, which were obtained by the pulse measurements at low temperatures. From the result for low applied voltages, a model of single-carrier, trap-free, space-charge-limited currents is established. On the basis of the model, the velocity-field curve can be calculated numerically up to the field strength of 60 kV/cm. Qualitatively over the wide field range, the curve is similar to that of Butcher and Fawcett, exhibiting a sharp peak and a subsequent saturation of the drift velocity. In the low field range, the curve agrees with the theory of Conwell and Vassell rather than the Butcher's one. This suggests that the scattering mechanisms due to impurities and inhomogeneities should be taken into account for the quantitative discussions of the present result.

• 社団法人応用物理学会の論文
• 1968-09-05

著者

• Yamashita Akiyasu

  Electrical Communication Laboratory

関連論文

• Space-Charge-Limited Currents and the Velocity-Field Characteristic in n-Type GaAs
• Space-Charge Currents in n-Type GaAs
• Trapping of High Field Domain in n-Type GaAs

スポンサーリンク