Stress in Evaporated Bismuth Films during and after Deposition

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概要

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• Bismuth was deposited onto thin strips of copper in a vacuum of 2∼5×10^<-5> torr, and the stress within the films was determined by observing electrically the bending of the strip. Continuous observations of the stress and electrical resistivity of films were simultaneously made during and after the deposition. When a critical thickness d_c is reached during the deposition, a sharp increase in compressive stress occurs, which precisely corresponds to the appearance of conductivity. The stress in bismuth films after the deposition onto substrates at room temperature is tensile (≲5×10^7dyn/cm^2). Electron micrographs show that films close to d_c in thickness are in the final channel stage or the hole stage. The origin of the compressive stress during deposition is discussed.

• 社団法人応用物理学会の論文
• 1968-09-05

著者

• Uozumi Kiyohiko

  Department Of Applied Physics Faculty Of Engineering University Of Tokyo

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• Stress in Evaporated Bismuth Films during and after Deposition

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