Some Observations of Large Imperfections in Highly Te-Doped GaAs Crystals

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概要

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• Large imperfections in highly Te-doped, boat-grown GaAs crystals were studied by the combination of etching technique, X-ray anomalous transmission and X-ray microanalysis. Impurity inclusions were observed. X-ray microanalyses showed the presence of tellurium and gallium, and the absence of arsenic in the inclusion. X-ray topographs revealed extended and corrugated contrasts of an unknown defect in the bulk. These defect structures were correlated with the high doping level of tellurium.

• 社団法人応用物理学会の論文
• 1968-05-05

著者

• Iizuka Takashi

  Electrotechnical Laboratory

関連論文

• Generation of Large Dislocation Loops in Silicon Crystals
• Hexagonal Platelets Observed in Nickel Diffused Silicon
• Anomalous Etch Patterns in Highly Doped Silicon
• Infrared Observation of Anomalous Patterns in Highly Doped Silicon
• Etch Patterns and Crystallographic Polarity in Hexagonal ZnS
• Generation of Scratch-Induced Dislocations in Silicon and Its Orientation Dependence
• Gold-Induced Dislocation Loops in Silicon Crystals
• Some Observations of Large Imperfections in Highly Te-Doped GaAs Crystals
• Helical Dislocations in Highly Te-Doped GaAs Crystals
• Direct Observation of Dislocations in a LEC-GaP Crystal by Light Scattering Method
• Investigation of Microprecipitates in Highly Te-Doped GaAs Crystals
• Observation of Microplasma Pulses and Electroluminescence in Gallium Phosphide Single Crystal

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