Investigation of Microprecipitates in Highly Te-Doped GaAs Crystals
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概要
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Inhomogeneities in highly Te-doped, melt-grown GaAs crystals carrier concentrations more than 1.6×10^<18> cm^<-3> have been investigated using etching technique, X-ray anomalous transmission, and electron microprobe analysis. Microstrains, arising from impurity precipitates produced either fine etch pots on the etched surface or contrast of small specks on the X-ray topographs. A microprecipitates-free was observed around a dislocation, and qualitatively analyzed. Small angle boundaries were observed, and the impurity concentration difference across the boundary was detected.
- 社団法人応用物理学会の論文
- 1968-05-05
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