Effect of Stress on Germanium and Silicon p-n Junctions : II. Non-Exhausted Condition

概要

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The theory of the stress dependence of the diode current in the exhausted condition, developed previously, is extended to that in the non-exhausted condition. The current changes due to stress are calculated for the main crystallographic orientations by taking into account the changes in the minority carrier concentrations and in the minority carrier mobilities. The changes in the minority carrier concentrations are calculated by taking into account the shifts in the shallow impurity levels. The results of the exhausted condition are also valid in the non-exhausted condition at room temperature. At lower temperatures, in general, the stress dependence of the minority electron concentration n_p overcomes that of the minority hole concentration p_n. In Si, the stress dependence of the diode current of the diode in which n_p is much greater than p_n, is larger than that of the diode in which p_n is much greater than n_p.
社団法人応用物理学会の論文
1968-12-05