Effect of Stress on Germanium and Silicon p-n Junctions

概要

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The current change induced by uniaxial compression is calculated for the <100>, <111>, <110> and <211> orientations. The change in minority carrier mobility is considered to higher order for stress in addition to the change in minority carrier concentration. The differences of heavy hole mass and light hole mass and their stress dependence are taken. Experimentally obtained deformation potential constants are used. The minority carrier concentration decreases at low stress level and then increases rapidly with increasing stress. The orientation which shows the maximum current change corresponds to the direction of the rotating axis of conduction valley. The orientation dependence of the current change is in good agreement with that obtained experimentally for the uniaxial and anisotropic stress effects. In Ge, the apparent stress coefficient of band gap is obtained as -10.5×10^<-12>eV cm^2/dyn for the <111> orientation.
社団法人応用物理学会の論文
1967-04-15