Preparation and Properties of GaAs-Si Heterojunctions by Solution Growth Method

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概要

• 論文の詳細を見る

• GaAs-Si heterojunctions were fabricated successfully by the travelling solvent method, where liquid gallium was used as the molten zone, Si as the substrate and GaAs as the source material. The thickness of the GaAs layer grown on the Si substrate was 20∼55μm for the growth period of 2∼10 hours at 880℃∼830℃. Single-crystallinity was confirmed by etching studies of the cross-sectioned junctions and by Laue backscatter X-ray data. Some properties of the GaAs-Si heterojunction were examined from the electrical characteristics. The formation of the GaAs-Si heterojunction was also confirmed from the photoelectrical properties.

• 社団法人応用物理学会の論文
• 1967-07-05

著者

• Nakano Takao

  Research And Development Division Kitaitami Works Mitsubishi Electric Corp.

• Nakano Takao

  Research And Development Division Kita-itami Works Mitsubishi Electric Corp.

関連論文

• Temperature Dependence of Recombination Lifetime in Gallium Arsenide Electroluminescent Diodes
• Preparation and Properties of GaAs-Si Heterojunctions by Solution Growth Method
• Improvement of Quantum Effeciency in Gallium Arsenide Electroluminescent Diodes

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