Temperature Dependence of Recombination Lifetime in Gallium Arsenide Electroluminescent Diodes

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概要

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• The temperature dependence of the radiative recombination lifetime, current dependence of the externally radiated light output, and the photon energy of the radiated light in gallium arsenide electroluminescent diodes were investigated in the temperature range from 345°K to 77°K. The radiative recombination lifetime was derived by using the Shockley-Read statistics. Experimental results were analysed by this model and it was concluded that the radiative recombination in our samples was caused by the transition process of the free electron to shallow-acceptor. This mechanism was confirmed from the current dependence of the externally radiated light output, as well as from the photon energy of the light output. The shallow-acceptor level in the gallium arsenide diode was determined to be E_ν+0.053eV, as measured by the temperature dependence of the radiative recombination lifetime, and also from the temperature dependence of the externally radiated light output. The photon energy measurements led to a value E_ν+0.056eV.

• 社団法人応用物理学会の論文
• 1967-10-05

著者

• Nakano Takao

  Research And Development Division Kitaitami Works Mitsubishi Electric Corp.

• Nakano Takao

  Research And Development Division Kita-itami Works Mitsubishi Electric Corp.

• OKU Taiji

  Research and Development Division, Kitaitami Works, Mitsubishi Electric Corp.

• Oku Taiji

  Research And Development Division Kitaitami Works Mitsubishi Electric Corp.

関連論文

• Temperature Dependence of Recombination Lifetime in Gallium Arsenide Electroluminescent Diodes
• Preparation and Properties of GaAs-Si Heterojunctions by Solution Growth Method
• Improvement of Quantum Effeciency in Gallium Arsenide Electroluminescent Diodes

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