Type Conversion of InSb from p to n by Ion Bombardment and Laser Irradiation
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概要
- 論文の詳細を見る
There are three approaches made form an n^+-layer on p-InSb. They are (1) proton or (2) Siion bombardment with an energy of 60 or 100 keV and a dose of 1〜2×10^<15> cm^<-2>, and (3) Q-switched Nd:YAG laser irradiation. Effects are investigated of subsequent isochronous annealing for 30 min. Both (1) and (3) directly form an n^+-layer without annealing, while (2) initially produces a p-layer which becomes n^+ after annealing above 200℃. The resultant n^+-layer obtained by (2) and (3) can with stand the annealing up to 350℃, whereas that by (1) is restored to p above 100℃. Mesa-type diodes at 77 K prepared from (2) and (3) show forward current density given by J=1×10^<-8> exp (qV/1.7kT) A/cm^2 and junction capacitance vs. reverse bias expressed by C∝(V_D+|V|)^<-0.43> with diffusion potential V_D=0.2 V.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Fujisawa Isao
Department Of Electronice Engineering Tamagawa University
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Fujisawa Isao
Department Of Electronics Engineering Tamagawa University
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