Relation between Phase Memory Effect and Velocity of Trap-Controlled High-Field Domain in CdS
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概要
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The phase memory effect and the dependence of the domain velocity upon both the light intensity and the bias voltage are investigated in bulk and evaporated CdS. "Incomplete" phase memory effect is found in these CdS. It is found that the dependence of the domain velocity v_d upon both the light intensity B and the bias voltage V is represented by v_d=cB^x V^Z(V=0.6〜1.0, z=O.7〜1.0, V V_th), where c is a constant, and V_th is the threshold voltaxe of the domain formation. The dependence of the domain velocitv is explained bay assuming that the domain velocity is just the average effective velocity of all the photo-excited electrons. The phase memory effect is explained by this dependence. It is concluded that the mechanism of the phase memory effect must contain at least both the deep hole traps and the deep electron traps.
- 社団法人応用物理学会の論文
- 1977-05-05
著者
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Yoshie Osamu
Department Of Cancer Research Fuji Gotemba Research Laboratories Chugai And Pharmaceutical Co
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Yoshie Osamu
Department Of Electronics Kogakuin University
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Yoshie Osamu
Department Of Bacteriology Kinki University School Of Medicine
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