Superconducting Transition Temperature of Nb-Ge Thin Films Prepared by Co-Evaporation

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概要

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• Nb-Ge thin films are prepared by co-evaporating Nb and Ge. Dependences of the superconducting critical temperature T_c the lattice parameter a_o and the resistivity on preparationconditions are studied. As the substrate temperature lowers front 1000 to 800℃, a_0 remains constant but T_c is lowered. Lowering the deposition rate results in a decrease in a_o and anincrease in T_c. T_c stays constant for the film thickness d larger than 2000 Å and is lowered for d smaller than 2000 Å. Especially, T_c is less than 4.2 K when d is smaller than 50 Å. The latticeparameter of the stoichiometric Nb3Ge is estimated to be 5.12_7 Å by extrapolating the ao's of single phase Nb-Ge thin films. A morphological study of Nb-Ge thin films is made by transmission electron microscopy. They consist of polycrystalline grains of about 500 Å in diameter.

• 社団法人応用物理学会の論文
• 1977-03-05

著者

• Tarutani Yoshinobu

  Central Research Laboratory Hitachi Ltd.

• Kudo Mitsuhiro

  Central Research Laboratory Hitachi Ltd.

• TARUTANI Yoshinobu

  Central Research Laboratory, Hitachi Ltd.,

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