Analysis of Temperature Dependence of P-n-p-n Device

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概要

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• The temperature dependence of the small signal alphas x_01 and x_02, and of the switching gate voltage V_Gs of a silicon p-n-p-n device is analysed theoretically by a method which variesall the device parameters with temperature. The variation of x_01 and x_02 with gate voltage is shown at various temperatures for different values of lifetime. The effects of the device parameters (lifetime, base width and doping level) are investigated on the variation of switching gate voltage V_GS, with temperature T. It is shown that the theoretical predictions agree well with the experimental characteristics of V_GS vs. T in the temperature range -20゜-80℃. This analysis shows that the characteristics of VGS vs. T can be tailored to a desired range by properly choosing the device parameters.

• 社団法人応用物理学会の論文
• 1977-03-05

著者

• Abe Toshiro

  Research Department Matsushita Electric Works Ltd.

• Nagoshi Yoshihiko

  Research Department Matsushita Electric Worics Ltd.

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• Analysis of Temperature Dependence of P-n-p-n Device

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