Reaction between Aluminium and SiO_2 in Integrated Circuits

スポンサーリンク

概要

• 論文の詳細を見る

• Structural changes produced in the system Al/SiO_2 during the stabilization annealing of integrated circuits (between 450 and 565℃) were studied by physical and chemical methods. Mass transport to aluminium surface through the film grain boundaries was observed and y-Al_2O_3 was recognized as one of the reaction products. A mechanism is suggested to explain the observed phenomena in the interface.

• 社団法人応用物理学会の論文
• 1976-10-05

著者

• Walsoe De

  Citefa (the Argentine Armed Forces Institute For Scientific And Technological Research):conicet (nat

• Walsoe De

  Citefa (the Argentine Armed Forces Institute For Scientific And Technological Research):conicet (nat

• Franco J.

  Facen (uba) (faculty Of Exact And Natural Sciences University Of Buenos Aires)

• CAVANAGH E.

  SENID (Naval Research and Development Center)

関連論文

• A New Solid State Cell with LiI as Solid Electrolyte : Chemistry (incl. physical process)
• Al^ Diffusion in SiO_2 of Integrated Circuits
• Reaction between Aluminium and SiO_2 in Integrated Circuits

スポンサーリンク