Current Controled Negative Resistance and Memory Switching Effect of Metal-Bismuth Oxide-Metal Thin Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1975-06-05

著者

• KOMORITA Kazunori

  Department of Electronic Engineering,Faculty of Science and Engineering,Saga University

• Suzuki Morio

  Faculty Of Science And Technology Tokyo University Of Science

• Suzuki Morio

  Faculty Of Science And Engineering Saga University

• Komorita Kazunori

  Department Of Electrical Engineering And Physics

関連論文

• Tunneling Studies of BaPb_Bi_O_3
• Triboluminescence of ZnS:Mn Films Deposited on Quartz Substrates with ZnO Buffer Layers
• Strong Ultraviolet and Green Emissions at Room Temperature from Annealed ZnO Thin Films
• Current Controled Negative Resistance and Memory Switching Effect of Metal-Bismuth Oxide-Metal Thin Films
• Preparation of Insulating Film for Tunneling Study on Zero Bias Anomaly
• Tunneling Studies in BaPb_Bi_O_3 under Magnetic Fields
• Tunneling Study in Ag-SiO-Bi_2Sr_2CaCu_2O_8_x Planer Junctions Fabricated on Single Crystal and Polycrystal

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