Phase Study on Binary System Ga-Se

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概要

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• The phase diagram of the system Ga-Se has been determined by the differential thermal analysis (DTA). The main features of the diagram are as follows: (1) the melting point of GaSe is 938±3℃ and Ga_2Se_3 is 1005±3℃. (2) the monotectic transition occurs at 915℃ in the lower composition region than 50 at.%Se. (3) the eutectic is formed at 884℃ in the composition region between GaSe and Ga_2Se_3. (4) the solidified samples in the region between Ga_2Se_3 and Se consist of mixtures of Ga_2Se_3 and Se. At higher selenium composition, the DTA peaks observed at about 140℃ and 45℃ probably correspond to the crystallization and the glass transition of selenium respectively. In the composition region less than 50 at.%Se, the sublimation products consist of gallium and GaSe. The phases of Ga_2Se and Ga_3Se_2 reported by other authors are not observed.

• 社団法人応用物理学会の論文
• 1974-03-05

著者

• Suzuki Hiromichi

  General Education Department Kyushu University

• Suzuki Hiromichi

  General Education Department Of Kyushu University

• MORI Ryuichi

  General Education Department of Kyushu University

関連論文

• Electron Affinity of Semiconducting Compound CdSe
• Gamma-Ray Induced Conductivity of CdSe
• On the Mechanism of the Electrical Conduction in CdSe
• Photo-voltaic Effect in Se-photocells having Artificial Intermediate Layers of CdSe, CdTe, ZnSe and ZnTe
• Contact Behavior of Metals to CdSe, CdTe, ZnSe and ZnTe
• The Electrical Properities of Zinc Telluride
• Galvanomagnetic Effects in Bi_2Se_3 at 4.2°K
• The Temperature Dependence of the Optical Absorption of Zinc Selenide
• Phase Study on Binary System Ga-Se

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