Transport Coefficient of Multi-Layer Film of Semiconductors

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概要

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• With the use of total reflection of phonons at the boundaries of multi-layer film, it is possible to control the two quantities of thermal conductivity and electric conductivity of semiconductor independently. This film has the possibility to be a very good thermoelectric substance owing to its small thermal conductivity and ordinary magnitude of electric conductivity. In this paper it is discussed as to what extent the thermal conductivity of multi-layer film can be reduced in terms of κ_F, κ_P and λ_<int>, where κ_F and κ_P are the thermal conductivities of total-reflected phonons and partial-reflected ones respectively, and λ_<int> is the mean free path due to cross relaxation between two groups of phonons. Theoretically it is expected that the figure of merit Z=α^2(σ/κ) increases by the order of a few decades. This is possible by the technical accomplishment of making a clean multi-layer film.

• 社団法人応用物理学会の論文
• 1972-06-05

著者

• Shishido Fumio

  Institute For Solid State Physics University Of Tokyo

• SHISHIDO Fumio

  Institute for Solid State Physics, University of Tokyo

関連論文

• A Stable Tunneling Device Composed of Two-Layer Insulator Film
• A Stabilized Tunneling Device through Double-Layer Insulator Film
• The Possibility of Field Emission from Metal Surface with a Q-Switched Laser Pulse
• Transport Coefficient of Multi-Layer Film of Semiconductors

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