A Stabilized Tunneling Device through Double-Layer Insulator Film

スポンサーリンク

概要

• 論文の詳細を見る

• A new hot electron tunneling diode is proposed which is expected to have a stabilized tunneling current and to be free from breakdown. This has the structure of m-I_1-I_2-M, i.e., doublelayer insulator film. The double-layer is composed of I_1 which has a small dielectric constant ε_1 [e.g.〜6 for NaCl] and a small thickness d_1[〜20Å], and I_2 which has large ε_2([e.g.〜70 for TiO_2] and large d_2[〜200Å]. The appearance of a maximum in the diode current as a function of the insulator thickness d_1 is derived theoretically. This leads to the stabilized current and to the prevention of breakdown. The appearance of a maximum was observed experimentally at the liquid helium temperature.

• 社団法人応用物理学会の論文
• 1974-04-05

著者

• Shishido Fumio

  Institute For Solid State Physics University Of Tokyo

関連論文

• A Stable Tunneling Device Composed of Two-Layer Insulator Film
• A Stabilized Tunneling Device through Double-Layer Insulator Film
• The Possibility of Field Emission from Metal Surface with a Q-Switched Laser Pulse
• Transport Coefficient of Multi-Layer Film of Semiconductors

スポンサーリンク