Optimum Harmonic Generation in Semiconductors

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概要

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• In this paper, the authors investigate the optimum magnitudes of the various parameters for which the magnitudes of the electric vectors of the second and third harmonic components, in the reflected and transmitted waves from a semiconducting slab at low temperatures, are the maximum. It is found that the intensity of harmonics in the transmitted component is higher than that in the reflected component. Appreciable second harmonics may be generated in the transmitted and reflected waves when 1.00<ξ_0<1.60 and 4.0<(ω_p/ω)^2<6.0 while the efficiency of third harmonic conversion is a maximum when ξ_0=0.80 and 14.0<(ω_p/ω)^2<16.0 for the transmitted component and when ξ_0=0.82 and 12.0<(ω_p/ω)^2<14.0 for the reflected component; ξ_0(=ωz/C) beinn the dimensionless thickness of the semiconducting slab.

• 社団法人応用物理学会の論文
• 1972-11-05

著者

• Sawhney R.l.

  Department Of Physics Indian Institute Of Technology

• Sawhney B.k.

  Department Of Physics Indian Institute Of Technology

• Sodha M.s.

  Department Of Physics Indian Institute Of Technology

関連論文

• Nonlinear Second Harmonic Generation in an Inhomogeneous Plasma
• Effect of Electron-Electron Scattering on Hall Mobility of Electrons in n Semiconductors
• Optimum Second Harmonic Generation in Indium Antimonide
• Nonlinear Second Harmonic Generation in an Inhomogeneous Magnetoplasma
• On Nonlinear Generation of Second Harmonic and Sum and Difference Frequencies in a Homogeneous Plasma
• Optimum Harmonic Generation in Semiconductors

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