Nonlinear Effects of Surface Charge Waves in a n-InSb MOS Structure in a Transverse Magnetic Field

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概要

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• Nonlinear effects resulting from a modulation of the propagation velocity of the surface charge wave in a n-InSb MOS structure in a transverse magnetic field have been investigated. It is found that the propagation velocity is a function of the MOS capacitance which can be modulated by a voltage across the structure. When the peak value of an input signal level exceeds several tenths of a millivolt, a distortion of the output waveform is observed. In order to observe parametric amplification, both the input signal and the pumping signal, with twice the frequency of the input signal, are applied, and a decrease in the propagation loss was observed. A theory has been developed to explain the above nonlinear phenomena. The theoretical curve agrees fairly well with experimental plots. It is concluded that if a larger modulation of the capacitance could be obtained, the device quality would be greatly improved.

• 社団法人応用物理学会の論文
• 1970-01-05

著者

• Toda Minoru

  Rca Research Laboratories Inc.

関連論文

• Optical Imaging Effect of Cr Film
• Propagation of Surface Charge Waves in the n-InSb MOS Structure in a Magnetic Field
• Nonlinear Effects of Surface Charge Waves in a n-InSb MOS Structure in a Transverse Magnetic Field

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