Thermodynamic Analysis of Vapor Transport of GaP in the PCl_3-Ga-H_2 Reaction System

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概要

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• A new approach to the thermodynamic analysis of the chemical transport reaction of the PCl_3-Ga-H_2 system is made. In this approach, the chemical reactiotas in reaction zone and deposition zone are analyzed individually. The result suggests that the Ga-P stoichiometry condition does not hold in their gas phase components and that the amount of gallium in gas phase in deposition zone is about 2.3 times as large as that of phosphorus. Growth rate of GaP was obtained from the calculated result as a function of temperature for various PCl_3 to H_2 feed ratios. A maximum growth rate occurs at around 730゜ and this temperature rises with increasing of PCl_3 to H_2 feed ratio. GaAs growth rate in the AsCl_3-Ga-H_2 reaction system is also obtained.

• 社団法人応用物理学会の論文
• 1971-09-05

著者

• Hara Tohru

  Matsushita Research Institute Tokyo

• ASAO Ichiro

  Matsushita Research Institute, Tokyo, Inc.

• Asao Ichiro

  Matsushita Research Institute Tokyo Inc.

• HARA Tohru

  Matsushita Research Institute, Tokyo, Inc.

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